Beam-induced deposition of low-resistivity material
US9090973B2 · kind B2 · utility
3Cited by
12References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2012 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Oct 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31732
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 μΩ·cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.