Electronic device with a plurality of memory cells and with physically unclonable function

US9093128B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jan Otterstedt · Unterhaching, DE
• David Müller · Mannheim, DE

Key dates

• Filing date: Nov 5, 2012
• Grant date: Jul 28, 2015
• Expiry date: Oct 6, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H04L63/0823
• WIPO field: Digital communication
• WIPO sector: Electrical engineering

Abstract

An electronic device includes a non-volatile memory having a plurality of memory cells, a memory controller, and an evaluator. The memory controller is configured to provide control signals to the non-volatile memory causing the non-volatile memory, or a selected memory section of the non-volatile memory, to be in one of a read state and a weak erase state, wherein the weak erase state causes the plurality of memory cells to maintain different states depending on different physical properties of the plurality of memory cells. The evaluator is configured to read out the plurality of memory cells and to provide a readout pattern during the read state, wherein the readout pattern that is provided after a preceding weak erase state corresponds to a physically unclonable function (PUF) response of the electronic device uniquely identifying the electronic device.