Nonvolatile semiconductor memory apparatus and data sensing method thereof
US9093169B2 · kind B2 · utility
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2References
14Claims
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Key dates
| Filing date | Aug 14, 2012 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Jun 15, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory apparatus includes a memory cell block, a plurality of page buffers, and a reference page buffer unit. The memory cell block includes a plurality of memory cell strings each of which includes a plurality of memory cells and a dummy memory cell string which includes a plurality of dummy memory cells. The page buffers sense data stored in the memory cells and apply the sensed data to an output node. The reference page buffer unit senses the dummy memory cells and adjusts the timing to apply the values sensed by the page buffers to the output node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.