High UV curing efficiency for low-k dielectrics
US9093265B2 · kind B2 · utility
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11References
19Claims
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Key dates
| Filing date | Oct 15, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Oct 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68771
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment is a method for semiconductor processing. In this method, a precursor film is provided over a semiconductor substrate, where the precursor film is made of a structural former and porogen. Prior to cross-linking, the porogen is removed by exposure to UV radiation having one or more wavelengths in the range of 150 nm to 300 nm, while a temperature of 300° C. to 500° C. is applied to the semiconductor substrate. Meanwhile, a Argon:Helium flow rate of 80>Ar>10 slm, 80>He>10 slm is set for the ambient substrate environment where the ratio of Ar:He ranges from 0:1 to 1:0 by volume or molality.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.