Patent · US Active

Methods for small trench patterning using chemical amplified photoresist compositions

US9093276B2 · kind B2 · utility

1Cited by
0References
20Claims
0Family size

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Inventors

Key dates

Filing dateNov 18, 2013
Grant dateJul 28, 2015
Priority date—
Expiry dateNov 18, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0274
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method for forming a pattern on a substrate is described. The method includes providing a substrate, forming a photosensitive layer over the substrate, exposing the photosensitive layer to a first exposure energy through a first mask, exposing the photosensitive layer to a second exposure energy through a second mask, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a developer solution, at least one photo-acid generator (PAG), and at least one photo-base generator (PBG). A portion of the layer exposed to the second exposure energy overlaps with a portion exposed to the first exposure energy.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.