Patent · US Active

High voltage low current surface emitting light emitting diode

US9093293B2 · kind B2 · utility

4Cited by

30References

20Claims

0Family size

Assignee

Cree, Inc. · US

Inventors

James Ibbetson · Lompoc, US
Sten Heikman · Goleta, US
Julio A. Garceran · Dover, US
George R. Brandes · Raleigh, US

Key dates

Filing date	Jul 25, 2011
Grant date	Jul 28, 2015
Priority date	—
Expiry date	Jan 25, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/857
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A light emitting diode chip includes a submount, a reflective layer on the submount, an insulating layer on the reflective layer opposite the submount, and a plurality of sub-LEDs on the insulating layer. Each of the sub-LEDs includes a first face adjacent to the submount and a transparent contact on the first face between the sub-LED and the insulating layer and electrical interconnects between adjacent ones of the sub-LEDs.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.