Spacer shaper formation with conformal dielectric film for void free PMD gap fill
US9093303B2 · kind B2 · utility
2Cited by
2References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 31, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Aug 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit may be formed by removing source/drain spacers from offset spacers on sidewalls of MOS transistor gates, forming a contact etch stop layer (CESL) spacer layer on lateral surfaces of the MOS transistor gates, etching back the CESL spacer layer to form sloped CESL spacers on the lateral surfaces of the MOS transistor gates with heights of ¼ to ¾ of the MOS transistor gates, forming a CESL over the sloped CESL spacers, the MOS transistor gates and the intervening substrate, and forming a PMD layer over the CESL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.