Tom Lii
12Patents
2h-index
3Co-inventors
39Inventor score
Filing activity: Sep 13, 2010 → Apr 18, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9093303B2 | Spacer shaper formation with conformal dielectric film for void free PMD gap fill | Electricity | 2 | Active |
| US9093380B2 | Dielectric liner added after contact etch before silicide formation | Electricity | 2 | Active |
| US9054158B2 | Method of forming a metal contact opening with a width that is smaller than the minimum feature size of a photolithographically-defined opening | Electricity | 1 | Active |
| US9385044B2 | Replacement gate process | Electricity | 1 | Active |
| US9437449B2 | Uniform, damage free nitride etch | Electricity | 1 | Active |
| US8507386B2 | Lateral uniformity in silicon recess etch | Electricity | 1 | Active |
| US10134731B2 | Dielectric liner added after contact etch before silicide formation | Electricity | 1 | Active |
| US9406779B2 | Spacer shaper formation with conformal dielectric film for void free PMD gap fill | Electricity | 1 | Active |
| US9659935B2 | Dielectric liner added after contact etch before silicide formation | Electricity | 1 | Active |
| US9741624B2 | Spacer shaper formation with conformal dielectric film for void free PMD gap fill | Electricity | 0 | Active |
| US9704720B2 | Uniform, damage free nitride ETCH | Electricity | 0 | Active |
| US9224657B2 | Hard mask for source/drain epitaxy control | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.