Semiconductor device and manufacturing method thereof
US9093312B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Sep 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes following steps. A mold is provided. The mold has a chamber and a plurality of protrusions in the chamber. A thermosetting material is injected into the chamber. The thermosetting material is cured. A parting step is performed to separate the cured thermosetting material from the mold, so as to form an interposer substrate. A plurality of blind holes corresponding to the protrusions is formed on the interposer substrate. A conductive material is filled into the blind holes to form a plurality of conductive pillars. A conductive pattern layer is formed on a surface of the interposer substrate. The conductive pattern layer is electrically connected with the conductive pillars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.