Method for processing a semiconductor workpiece with metallization

US9093385B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Anja Gissibl · Regensburg, DE
• Hermann Wendt · Grasbrunn, DE
• Thomas Fischer · Umkirch, DE
• Bernhard Weidgans · Bernhardswald, DE
• Gudrun Stranzl · Eisenlohrsweg, AT
• Tobias Schmidt · Munich, DE
• Dietrich Bonart · Bad Abbach, DE

Key dates

• Filing date: May 28, 2013
• Grant date: Jul 28, 2015
• Expiry date: Jun 25, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76892
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for processing a semiconductor workpiece is provided, which may include: providing a semiconductor workpiece including a metallization layer stack disposed at a side of the semiconductor workpiece, the metallization layer stack including at least a first layer and a second layer disposed over the first layer, wherein the first layer contains a first material and the second layer contains a second material that is different from the first material; patterning the metallization layer stack, wherein patterning the metallization layer stack includes wet etching the first layer and the second layer by means of an etching solution that has at least substantially the same etching rate for the first material and the second material.