Method of fabricating semiconductor device
US9093465B2 · kind B2 · utility
1Cited by
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11Claims
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Key dates
| Filing date | Dec 11, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Dec 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes the following steps. A substrate including at least a fin structure is provided, and a material layer is formed to cover the fin structure. Then, a first planarization process is performed on the material layer to form a first material layer, and an oxide layer is formed on the first material layer. Subsequently, the oxide layer is totally removed to expose the first material layer, and a second material layer is formed in-situ on the first material layer after totally removing the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.