Patent · US Active

Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates

US9093507B2 · kind B2 · utility

15Cited by
3References
16Claims
0Family size

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Key dates

Filing dateOct 28, 2013
Grant dateJul 28, 2015
Priority date
Expiry dateNov 15, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K10/484
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.