High-voltage transistor and component containing the latter

US9093527B2 · kind B2 · utility

Assignee

• AMS AG · AT

Inventors

• Martin Knaipp · Kufstein, AT
• Georg Röhrer · Graz, AT

Key dates

• Filing date: Nov 13, 2006
• Grant date: Jul 28, 2015
• Expiry date: Jan 16, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A high-voltage NMOS transistor with low threshold voltage. The body doping that defines the channel region is in the form of a deep p-well. An additional shallow p-doping is arranged as a channel stopper on the transistor head. This additional shallow p-doping is produced in the semiconductor substrate at the end of the deep p-well that faces away from the channel region, and extends up to a location underneath a field oxide region that encloses the active window. The leakage current of the parasitic transistor at the transistor head is suppressed with the channel stopper.