Method of manufacturing semiconductor device and semiconductor device
US9093546B2 · kind B2 · utility
4Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Dec 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
An object is to provide a semiconductor device having improved reliability by preventing, in forming a nonvolatile memory and MOSFETS on the same substrate, an increase in the size of grains in a gate electrode. The object can be achieved by forming the control gate electrode of the nonvolatile memory and the gate electrodes of the other MOSFETs from films of the same layer, respectively, and configuring each of the control gate electrode and the gate electrodes from a stack of two polysilicon film layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.