Kota Funayama
37Patents
11h-index
71Co-inventors
78Inventor score
Filing activity: Jul 29, 1999 → Feb 28, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6090684A | Method for manufacturing semiconductor device | Emerging Cross-Sectional Technologies | 156 | Expired |
| US9754963B1 | Multi-tier memory stack structure containing two types of support pillar structures | Electricity | 63 | Active |
| US6670642B2 | Semiconductor memory device using vertical-channel transistors | Electricity | 56 | Expired |
| US9978766B1 | Three-dimensional memory device with electrically isolated support pillar structures and method of making thereof | Electricity | 36 | Active |
| US9691781B1 | Vertical resistor in 3D memory device with two-tier stack | Electricity | 32 | Active |
| US9780034B1 | Three-dimensional memory device containing annular etch-stop spacer and method of making thereof | Electricity | 27 | Active |
| US7098478B2 | Semiconductor memory device using vertical-channel transistors | Electricity | 26 | Expired |
| US10224240B1 | Distortion reduction of memory openings in a multi-tier memory device through thermal cycle control | Electricity | 24 | Active |
| US9929174B1 | Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereof | Electricity | 21 | Active |
| US7348230B2 | Manufacturing method of semiconductor device | Electricity | 21 | Expired |
| US9859363B2 | Self-aligned isolation dielectric structures for a three-dimensional memory device | Electricity | 13 | Active |
| US10600802B2 | Multi-tier memory device with rounded top part of joint structure and methods of making the same | Electricity | 11 | Active |
| US8853036B2 | Semiconductor device and method of manufacturing the same | Electricity | 6 | Active |
| US6943373B2 | Semiconductor memory device using vertical-channel transistors | Electricity | 5 | Expired |
| US10658377B2 | Three-dimensional memory device with reduced etch damage to memory films and methods of making the same | Electricity | 5 | Active |
| US8633530B2 | Semiconductor device and method of manufacturing the same | Electricity | 4 | Active |
| US9093546B2 | Method of manufacturing semiconductor device and semiconductor device | Electricity | 4 | Active |
| US6403446B1 | Method for manufacturing semiconductor device | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8133795B2 | Method of manufacturing semiconductor integrated circuit device | Physics | 3 | Active |
| US7045864B2 | Semiconductor integrated circuit device | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8461642B2 | Semiconductor device having a nonvolatile memory cell with field effect transistors | Electricity | 3 | Active |
| US9941297B2 | Vertical resistor in 3D memory device with two-tier stack | Electricity | 3 | Active |
| US9443991B2 | Semiconductor device and method of manufacturing the same | Electricity | 3 | Active |
| US8569144B2 | Method of manufacturing semiconductor integrated circuit device | Physics | 3 | Active |
| US9324883B2 | Semiconductor device and method of manufacturing the same | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.