Fin diode structure
US9093565B2 · kind B2 · utility
2Cited by
13References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Aug 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin diode structure and method of manufacturing the same is provided in present invention, which the structure includes a substrate, a doped well formed in the substrate, a plurality of fins of first conductivity type and a plurality of fins of second conductivity type protruding from the doped well, and a doped region of first conductivity type formed globally in the substrate between the fins of first conductivity type, the fins of second conductivity type, the shallow trench isolation and the doped well and connecting with the fins of first doped type and the fins of second doped type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.