Image sensor including temperature sensor and electronic shutter function
US9093573B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 9, 2013 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Feb 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a substrate having a first conductivity type. A first well in the substrate has an opposite conductivity type and is doped with opposite conductivity type dopant. A second well in the first well has the opposite conductivity type and is doped with opposite conductivity type dopant. A first region in the second well has the opposite conductivity type and is doped with opposite conductivity type dopant. A second region in the first region has the first conductivity type and is doped with first conductivity type dopant. A third region in the second well adjacent the first region is of the opposite conductivity type and is doped with opposite conductivity type dopant. A temperature sensor is disposed between, and is connected to each of, the second region and the third region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.