Method for manufacturing and magnetic devices having double tunnel barriers
US9093640B2 · kind B2 · utility
31Cited by
6References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2014 |
| Grant date | Jul 28, 2015 |
| Priority date | — |
| Expiry date | Mar 19, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A dual tunnel barrier magnetic element has a free magnetic layer positioned between first and second tunnel barriers and an electrode over the second tunnel barrier. A two step etch process allows for forming an encapsulation material on a side wall of the electrode and the second tunnel barrier subsequent to the first etch for preventing damage to the first tunnel barrier when performing the second etch to remove a portion of the free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.