Wafer scale epitaxial graphene transfer

US9096050B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Stephen W. Bedell · Wappingers Falls, US
• Christos D. Dimitrakopoulos · Baldwin Place, US
• Keith E. Fogel · Potsdam, US
• James B. Hannon · Somers, US
• Jeehwan Kim · White Plains, US
• Hongsik Park · Suwon-si, KR
• Dirk Pfeiffer · Dobbs Ferry, US
• Devendra K. Sadana · Pleasantville, US

Key dates

• Filing date: Apr 2, 2013
• Grant date: Aug 4, 2015
• Expiry date: May 28, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T156/1153
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having a monolayer. A stressor layer is formed on the spreading layer, and the stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein the closest monolayer remains on the stressor layer.