Methods for plasma processing

US9096933B2 · kind B2 · utility

Assignee

• Aixtron, Inc. · DE

Inventors

• Stephen E. Savas · Pleasanton, US
• Carl Galewski · Aromas, US
• Allan B. Wiesnoski · Pleasanton, US
• Sai Mantripragada · Fremont, US
• Sooyun Joh · Livermore, US

Key dates

• Filing date: Apr 15, 2014
• Grant date: Aug 4, 2015
• Expiry date: Apr 15, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67069
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.