Inventor · Aromas, CA, US

Carl Galewski

26Patents
14h-index
17Co-inventors
78Inventor score

Filing activity: Feb 25, 1992 → Mar 12, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US6503330B1 Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition Chemistry; Metallurgy 463 Expired
US6540838B2 Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition Electricity 391 Expired
US6305314A Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition Electricity 363 Expired
US6174377A Processing chamber for atomic layer deposition processes Electricity 353 Expired
US6451119B2 Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition Electricity 251 Expired
US6368954B1 Method of copper interconnect formation using atomic layer copper deposition Electricity 199 Expired
US5855675A Multipurpose processing chamber for chemical vapor deposition processes Electricity 131 Expired
US6638859B2 Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition Chemistry; Metallurgy 117 Expired
US5324684A Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure Emerging Cross-Sectional Technologies 80 Expired
US6387185B1 Processing chamber for atomic layer deposition processes Electricity 70 Expired
US6479902B1 Semiconductor catalytic layer and atomic layer deposition thereof Electricity 59 Expired
US6818067B2 Processing chamber for atomic layer deposition processes Electricity 50 Expired
US8697197B2 Methods for plasma processing Electricity 29 Active
US6897119B1 Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition Chemistry; Metallurgy 19 Expired
US6538327B1 Method of copper interconnect formation using atomic layer copper deposition and a device thereby formed Electricity 9 Expired
US6635570B1 PECVD and CVD processes for WNx deposition Electricity 3 Expired
US9299956B2 Method for deposition of high-performance coatings and encapsulated electronic devices Electricity 2 Active
US9443702B2 Methods for plasma processing Electricity 2 Active
US9096933B2 Methods for plasma processing Electricity 2 Active
US10526708B2 Methods for forming thin protective and optical layers on substrates Electricity 1 Active
US9096932B2 Methods for plasma processing Electricity 1 Active
US8765232B2 Apparatus and method for dielectric deposition Electricity 1 Active
US10049859B2 Plasma generating units for processing a substrate Electricity 1 Active
US9359674B2 Apparatus and method for dielectric deposition Electricity 0 Active
US9831466B2 Method for depositing a multi-layer moisture barrier on electronic devices and electronic devices protected by a multi-layer moisture barrier Emerging Cross-Sectional Technologies 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.