Method of manufacturing magnetoresistive element
US9097754B2 · kind B2 · utility
2Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2013 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Feb 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.