Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusion
US9099124B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2014 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Sep 28, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/39
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A tunneling magnetoresistance (TMR) device, like a magnetic recording disk drive read head, has a nitrogen-containing layer between the MgO barrier layer and the free and/or reference ferromagnetic layers that contain boron. In one embodiment the free ferromagnetic layer includes a boron-containing layer and a trilayer nanolayer structure between the MgO barrier layer and the boron-containing layer. The trilayer nanolayer structure includes a thin Co, Fe or CoFe first nanolayer in contact with the MgO layer, a thin FeN or CoFeN second nanolayer on the first nanolayer and a thin Co, Fe or CoFe third nanolayer on the FeN or CoFeN nanolayer between the FeN or CoFeN nanolayer and the boron-containing layer. If the reference ferromagnetic layer also includes a boron-containing layer then a similar trilayer nanolayer structure may be located between the boron-containing layer and the MgO barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.