Resistive random access memory with electric-field strengthened layer and manufacturing method thereof
US9099178B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2012 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Apr 26, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/55
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
This invention belongs to the technical field of memories and specifically relates to a resistive random access memory structure with an electric-field strengthened layer and a manufacturing method thereof. The resistive random access memory in the present invention can include a top electrode, a bottom electrode and a composite layer which is placed between the top electrode and the bottom electrode and have a first resistive switching layer and a second resistive switching and electric-field strengthened layer; the second resistive switching and electric-field strengthened layer cab be adjacent to the first resistive switching layer and have a dielectric constant lower than that of the first resistive switching layer. The electric-field distribution in the RRAM unit is adjustable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.