Preparation of lanthanum-containing precursors and deposition of lanthanum-containing films

US9099301B1 · kind B1 · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventor

• Clément Lansalot-Matras · Tsukuba, JP

Key dates

• Filing date: Dec 18, 2013
• Grant date: Aug 4, 2015
• Expiry date: Dec 18, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and compositions for depositing La-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.