Inventor · Tsukuba, JP

Clément Lansalot-Matras

36Patents
4h-index
26Co-inventors
59Inventor score

Filing activity: Jul 16, 2008 → Sep 30, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9691771B2 Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films Electricity 451 Active
US10094021B2 Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films Chemistry; Metallurgy 11 Active
US10174423B2 Niobium-containing film forming compositions and vapor deposition of Niobium-containing films Chemistry; Metallurgy 4 Active
US9499571B2 Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films Chemistry; Metallurgy 4 Active
US8617649B2 Cyclopentadienyl transition metal precursors for deposition of transition metal-containing films Chemistry; Metallurgy 4 Active
US9206507B2 Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions Electricity 3 Active
US9099301B1 Preparation of lanthanum-containing precursors and deposition of lanthanum-containing films Electricity 3 Active
US10023462B2 Niobium-Nitride film forming compositions and vapor deposition of Niobium-Nitride films Chemistry; Metallurgy 3 Active
US8236979B2 Methods for synthesis of heteroleptic cyclopentadienyl transition metal precursors Chemistry; Metallurgy 2 Active
US9518075B2 Group 5 cyclopentadienyl transition metal-containing precursors for deposition of group 5 transition metal-containing films Chemistry; Metallurgy 2 Active
US9663547B2 Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films Chemistry; Metallurgy 2 Active
US9786671B2 Niobium-containing film forming compositions and vapor deposition of niobium-containing films Electricity 2 Active
US8298616B2 Heteroleptic cyclopentadienyl transition metal precursors for deposition of transition metal-containing films Chemistry; Metallurgy 1 Active
US8686138B2 Heteroleptic pyrrolecarbaldimine precursors Chemistry; Metallurgy 1 Active
US8691985B2 Heteroleptic pyrrolecarbaldimine precursors Chemistry; Metallurgy 1 Active
US9416443B2 Method for the deposition of a ruthenium containing film using arene diazadiene ruthenium(0) precursors Electricity 1 Active
US9034761B2 Heteroleptic (allyl)(pyrroles-2-aldiminate) metal-containing precursors, their synthesis and vapor deposition thereof to deposit metal-containing films Electricity 1 Active
US11549182B2 Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films Chemistry; Metallurgy 0 Active
US8431719B1 Heteroleptic pyrrolecarbaldimine precursors Chemistry; Metallurgy 0 Active
US9790591B2 Titanium-containing film forming compositions for vapor deposition of titanium-containing films Chemistry; Metallurgy 0 Active
US11021793B2 Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films Chemistry; Metallurgy 0 Active
US9121093B2 Bis-ketoiminate copper precursors for deposition of copper-containing films and methods thereof Chemistry; Metallurgy 0 Active
US9748249B2 Tantalum-containing film forming compositions and vapor deposition of tantalum-containing films Electricity 0 Active
US10106887B2 Group 5 transition metal-containing compounds for vapor deposition of group 5 transition metal-containing films Chemistry; Metallurgy 0 Active
US9691770B2 Vanadium-containing film forming compositions and vapor deposition of vanadium-containing films Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.