Integrated circuit device and a method for providing ESD protection
US9099306B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2012 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Jan 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
An integrated circuit (IC) device including an electrostatic discharge (ESD) protection network for a high voltage application. The ESD protection network includes a common diode structure coupled between an external contact of the IC device and a substrate of the IC device, such that the common diode structure is forward biased towards the external contact, a Darlington transistor structure coupled between the external contact and the substrate of the IC device, and the Darlington transistor structure includes: an emitter node coupled to the external contact; a collector node coupled to the substrate; and a base node coupled between the emitter node of the Darlington transistor structure and the common diode structure. The at least one ESD protection network further comprises an isolation diode structure coupled between the emitter node and the base node of the Darlington transistor structure such that the isolation diode structure is forward biased towards the base node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.