Semiconductor device and fabricating method thereof
US9099336B2 · kind B2 · utility
1Cited by
4References
15Claims
0Family size
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Mar 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.