Three-dimensional semiconductor memory devices and method of fabricating the same
US9099347B2 · kind B2 · utility
10Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2012 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Jan 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
Abstract
Provided are three-dimensional semiconductor memory devices and methods of fabricating the same. The device may include an electrode structure extending in a first direction and including electrodes and insulating patterns which are alternately and repeatedly stacked on a substrate, and vertical active patterns penetrating the electrode structure. At least an uppermost electrode of the electrodes is divided into a plurality of physically isolated segments arranged in the first direction. The segments of the uppermost electrode are electrically connected to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.