Youngwoo Park
81Patents
11h-index
75Co-inventors
77Inventor score
Filing activity: Oct 11, 2010 → Dec 22, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8704288B2 | Methods for forming etch stop layers, semiconductor devices having the same, and methods for fabricating semiconductor devices | Electricity | 31 | Active |
| US8741761B2 | Methods of manufacturing three-dimensional semiconductor devices | Electricity | 25 | Active |
| US9515087B2 | Three-dimensional semiconductor memory device | Electricity | 23 | Active |
| US9685452B2 | Three-dimensional semiconductor device with vertical and horizontal channels in stack structure having electrodes vertically stacked on the substrate | Electricity | 21 | Active |
| US9595346B2 | 3-Dimensional semiconductor memory device and operating method thereof | Electricity | 19 | Active |
| US9362303B2 | Semiconductor memory devices including fine patterns and methods of fabricating the same | Electricity | 16 | Active |
| US10229927B2 | Semiconductor device and method of manufacturing the semiconductor device | Electricity | 15 | Active |
| US9019739B2 | Three-dimensional semiconductor devices and methods of fabricating the same | Physics | 13 | Active |
| US9385139B2 | Three dimensional semiconductor memory devices and methods of fabricating the same | Electricity | 12 | Active |
| US8822971B2 | Semiconductor memory device having three-dimensionally arranged resistive memory cells | Electricity | 11 | Active |
| US8822322B2 | Semiconductor devices and methods of fabricating the same | Electricity | 11 | Active |
| US9437483B2 | Methods for forming etch stop layers, semiconductor devices having the same, and methods for fabricating semiconductor devices | Electricity | 11 | Active |
| US9099347B2 | Three-dimensional semiconductor memory devices and method of fabricating the same | Electricity | 10 | Active |
| US9337207B2 | Semiconductor devices including word line interconnecting structures | Electricity | 10 | Active |
| US8530959B2 | Three-dimensional semiconductor memory device | Electricity | 9 | Active |
| US9183893B2 | Semiconductor memory device | Physics | 8 | Active |
| US10002877B2 | Three-dimensional semiconductor devices and fabricating methods thereof | Electricity | 8 | Active |
| US8379456B2 | Nonvolatile memory devices having dummy cell and bias methods thereof | Physics | 7 | Active |
| US8796091B2 | Three-dimensional semiconductor memory devices | Electricity | 7 | Active |
| US10056404B2 | Semiconductor memory devices having closely spaced bit lines | Electricity | 6 | Active |
| US9875931B2 | Semiconductor device having interconnection structure | Electricity | 6 | Active |
| US8735860B2 | Variable resistance memory device and method of fabricating the same | Electricity | 5 | Active |
| US9559112B2 | Semiconductor devices and methods of fabricating the same | Electricity | 5 | Active |
| US8643080B2 | Three-dimensional semiconductor memory device | Electricity | 5 | Active |
| US10096616B2 | Three-dimensional semiconductor device with vertical and horizontal channels in stack structure having electrodes vertically stacked on the substrate | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.