Metal-induced crystallization of continuous semiconductor thin films controlled by a diffusion barrier
US9099411B2 · kind B2 · utility
3Cited by
4References
9Claims
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Key dates
| Filing date | Aug 24, 2011 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Dec 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02672
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device and a method of forming a continuous polycrystalline Ge film having crystalline Ge islands is provided that includes depositing an amorphous Ge (a-Ge) layer on a substrate, oxidizing the top surface of the a-Ge layer to form a GeOx layer, depositing a seed layer of Al on the GeOx layer and catalyzing the Al seed layer, where Ge mass transport is generated from the underlying a-Ge layer to the Al seed layer through the GeOx layer by thermal annealing, where a continuous polycrystalline Ge film having crystalline Ge islands is formed on the Al seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.