Paul McIntyre
20Patents
8h-index
25Co-inventors
75Inventor score
Filing activity: Apr 17, 1990 → Nov 23, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10510340B1 | Dynamic wakeword detection | Physics | 119 | Active |
| US10777189B1 | Dynamic wakeword detection | Physics | 104 | Active |
| US5972722A | Adhesion promoting sacrificial etch stop layer in advanced capacitor structures | Electricity | 65 | Expired |
| US5231074A | Preparation of highly textured oxide superconducting films from MOD precursor solutions | Emerging Cross-Sectional Technologies | 61 | Expired |
| US6170118A | Collection apparatus for use with blower/vacuum units | Emerging Cross-Sectional Technologies | 37 | Expired |
| US6211034A | Metal patterning with adhesive hardmask layer | Electricity | 32 | Expired |
| US5722110A | Portable industrial vacuum machine | Human Necessities | 29 | Expired |
| US7724562B2 | Electrochemical memory with heater | Emerging Cross-Sectional Technologies | 16 | Active |
| US8058643B2 | Electrochemical memory with internal boundary | Physics | 6 | Active |
| US7917992B2 | Gutter cleaning vacuum system including a novel hinged vacuum manifold assembly | Emerging Cross-Sectional Technologies | 6 | Active |
| US7271458B2 | High-k dielectric for thermodynamically-stable substrate-type materials | Electricity | 5 | Expired |
| US9099411B2 | Metal-induced crystallization of continuous semiconductor thin films controlled by a diffusion barrier | Electricity | 3 | Active |
| US7517818B2 | Method for forming a nitrided germanium-containing layer using plasma processing | Electricity | 2 | Active |
| US6897105B1 | Method of forming metal oxide gate structures and capacitor electrodes | Emerging Cross-Sectional Technologies | 2 | Expired |
| US8221599B2 | Corrosion-resistant anodes, devices including the anodes, and methods of using the anodes | Emerging Cross-Sectional Technologies | 2 | Active |
| US6911689B2 | Versatile system for chromium based diffusion barriers in electrode structures | Electricity | 2 | Expired |
| US7517812B2 | Method and system for forming a nitrided germanium-containing layer using plasma processing | Electricity | 0 | Active |
| US12166098B2 | Cerium-doped ferroelectric materials and related devices and methods | Electricity | 0 | Active |
| US11699433B2 | Dynamic wakeword detection | Physics | 0 | Active |
| US9343291B2 | Method for forming an interfacial layer on a semiconductor using hydrogen plasma | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.