Semiconductor device and manufacturing method thereof
US9099443B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 26, 2013 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Oct 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment includes a semiconductor substrate that includes a first region and a second region having a thickness that is less than a thickness of the first region, a first metal film having a same film thickness provided in each of a first through hole, and a second through hole, the first through hole penetrating the semiconductor substrate from the second surface to the first surface in the first region, and the second through hole penetrating the semiconductor substrate from the second surface to the first surface in the second region. A second metal film is formed on the first metal films and is provided inside the first through hole, and inside and outside of the second through hole. A thickness of the second metal film located outside the second through hole is greater than a thickness of the second metal film located outside the first through hole, and heights of upper surfaces of the second metal film in the first and second regions are the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.