Programmable array of silicon nanowire field effect transistor and method for fabricating the same
US9099500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2011 |
| Grant date | Aug 4, 2015 |
| Priority date | — |
| Expiry date | Jul 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02603
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention discloses a hexagonal programmable array based on a silicon nanowire field effect transistor and a method for fabricating the same. The array includes a nanowire device, a nanowire device connection region and a gate connection region, wherein, the nanowire device has a cylinder shape, and includes a silicon nanowire channel, a gate dielectric layer, and a gate region, the nanowire channel being surrounded by the gate dielectric layer, and the gate dielectric layer being surrounded by the gate region; the nanowire devices are arranged in a hexagon shape to form programming unit, the nanowire device connection region is a connection node of three nanowire devices and secured to a silicon supporter. The present invention can achieve a complex control logic of interconnections and is suitable for a digital/analog and a mixed-signal circuit having a high integration degree and a high speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.