Insulated gate bipolar transistor

US9099520B2 · kind B2 · utility

Assignee

• ABB TECHNOLOGY AG · CH

Inventors

• Munaf Rahimo · Uezwil, CH
• Maxi Andenna · Fislisbach, CH
• Chiara Corvasce · Bergdietikon, CH
• Arnost Kopta · Zürich, CH

Key dates

• Filing date: Jan 14, 2014
• Grant date: Aug 4, 2015
• Expiry date: Mar 2, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

An IGBT has layers between emitter and collector sides. The layers include a drift layer, a base layer electrically contacting an emitter electrode and separated from the drift layer, a first source region arranged on the base layer towards the emitter side and electrically contacting the emitter electrode, and a first trench gate electrode arranged lateral to the base layer and separated from the base layer, the first source region and the drift layer by a first insulating layer. A channel exits between the emitter electrode, the first source region, the base layer and the drift layer. A second insulating layer is arranged on top of the first trench gate electrode. An enhancement layer separates the base layer from the drift layer in a plane parallel to the emitter side. A grounded gate electrode includes a second, grounded trench gate electrode and an electrically conducting layer.