Transistor having an active region with wing structure

US9099556B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chen-Liang Chu · Hsinchu, TW
• Fei-Yuh Chen · Baoshan, TW
• Yi-Sheng Chen · Hsinchu, TW
• Shih-Kuang Hsiao · Baoshan, TW
• Chun Lin Tsai · Baoshan, TW
• Kong-Beng Thei · Baoshan, TW

Key dates

• Filing date: Aug 19, 2011
• Grant date: Aug 4, 2015
• Expiry date: Oct 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/307

Abstract

A semiconductor device includes an active region having a channel region and at least a wing region adjoining the channel region under the gate dielectric layer. The at least one wing region may be two symmetrical wing regions across the channel region.