Inventor · Hsinchu, TW

Yi-Sheng Chen

36Patents
7h-index
34Co-inventors
65Inventor score

Filing activity: Sep 27, 2003 → Jul 26, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
USD921768S1 3D puzzle toy General 31 Active
USD921769S1 3D puzzle toy General 29 Active
US10050033B1 High voltage integration for HKMG technology Electricity 13 Active
USD922500S1 3D puzzle toy General 12 Active
US8021019B2 Light-emitting diode lighting device with multiple-layered source Mechanical Engineering; Lighting; Heating 11 Active
USD922499S1 3D puzzle toy General 10 Active
US10340357B2 Dishing prevention dummy structures for semiconductor devices Electricity 7 Active
US10629592B2 Through silicon via design for stacking integrated circuits Electricity 6 Active
US7869213B2 Heat dissipation device of notebook computer Physics 5 Active
US9095234B2 Foldable mat Performing Operations; Transporting 4 Active
US6890040B2 Wheel having detachably securing spokes Performing Operations; Transporting 4 Expired
US10964692B2 Through silicon via design for stacking integrated circuits Electricity 3 Active
US11063038B2 Through silicon via design for stacking integrated circuits Electricity 3 Active
US10516029B2 Dishing prevention dummy structures for semiconductor devices Electricity 2 Active
US9190895B1 Circuit for controlling load switch Electricity 2 Active
US9874919B2 Soft switching control after power interruption Emerging Cross-Sectional Technologies 2 Active
US9099556B2 Transistor having an active region with wing structure Electricity 2 Active
US11004844B2 Recessed STI as the gate dielectric of HV device Electricity 1 Active
US10937785B2 Semiconductor device Electricity 1 Active
US10790279B2 High voltage integration for HKMG technology Electricity 1 Active
US11302691B2 High voltage integration for HKMG technology Electricity 1 Active
US10916542B2 Recessed STI as the gate dielectric of HV device Electricity 1 Active
US10510750B2 High voltage integration for HKMG technology Electricity 1 Active
US11646308B2 Through silicon via design for stacking integrated circuits Electricity 0 Active
US9299806B2 High voltage drain-extended MOSFET having extra drain-OD addition Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.