Sputtering target temperature control utilizing layers having predetermined emissivity coefficients
US9103018B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2010 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Nov 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3497
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputter coating apparatus for sputter coating a substrate in a processing chamber includes a target of sputter coating material supported within the processing chamber. The target has a sputtering surface and a back surface. The target is affixed to a backing plate such that the back surface of the target is disposed adjacent to a first surface of the backing plate. The backing plate is in fluid communication with a source of cooling fluid. The target back surface has a first layer selected to have a high thermal emissivity coefficient. The backing plate first surface carries a second layer having a high emissivity coefficient. The target back surface first layer and the backing plate first surface second layer provide enhanced heat transfer between the target and the backing plate via thermal radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.