Magnetron sputtering apparatus and method of manufacturing semiconductor device
US9103025B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2007 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Dec 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3455
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A magnetron sputtering apparatus includes a vacuum chamber, a target and a substrate holder disposed to face one another in the vacuum chamber, a magnetron disposed on the target side which is opposite to where the substrate holder is disposed, and a rotating mechanism for rotating the magnetron about an axis perpendicular to a face of the target. The magnetron includes an inner magnet formed of a sector-shaped frame and an outer magnet formed of a sector-shaped frame, these inner and outer magnets having a different polarity each other, the outer magnet being disposed to surround the inner magnet leaving a gap between the arcuate segments of the inner and outer magnets as well as a gap between straight segments of the inner and outer magnets, the width of these frames being substantially the same with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.