Multi-step location specific process for substrate edge profile correction for GCIB system
US9105443B2 · kind B2 · utility
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9References
11Claims
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Key dates
| Filing date | Nov 20, 2014 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Nov 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30483
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.