Patent · US Active

Method for forming fin field effect transistor

US9105475B1 · kind B1 · utility

4Cited by

0References

20Claims

0Family size

Assignee

TSINGHUA UNIVERSITY · CN

Inventors

Jing Wang · Longbeilingcun, CN
Lei Xiao · Beijing, CN
Mei Zhao · Tianjin, CN
Renrong Liang · Beijing, CN
Jun Xu · Nanjing, CN

Key dates

Filing date	Mar 18, 2014
Grant date	Aug 11, 2015
Priority date	—
Expiry date	Mar 18, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/017
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming a fin field effect transistor is provided. The method includes: providing a substrate; forming a fin structure with a material Ge or GeSi on the substrate; implanting atoms, molecules, ions or plasmas containing an element Sn into the fin structure with the material Ge or GeSi to form a Ge-based GeSn layer or a Ge-based GeSnSi layer; and forming a gate stack on the Ge-based GeSn layer or the Ge-based GeSnSi layer, the gate stack being oriented transversely to the fin structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.