Devices and systems for power conversion circuits

US9105560B2 · kind B2 · utility

Assignee

• GaN Systems Inc. · CA

Inventors

• John Roberts · Ottawa, CA
• Greg P. Klowak · Ottawa, CA

Key dates

• Filing date: Dec 13, 2013
• Grant date: Aug 11, 2015
• Expiry date: Dec 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/30107
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Devices and systems comprising driver circuits are disclosed for MOSFET driven, normally-on gallium nitride (GaN) power transistors. Preferably, a low power, high speed CMOS driver circuit with an integrated low voltage, lateral MOSFET driver is series coupled, in a hybrid cascode arrangement to a high voltage GaN HEMT, for improved control of noise and voltage transients. Co-packaging of a GaN transistor die and a CMOS driver die using island topology contacts, through substrate vias, and a flip-chip, stacked configuration provides interconnections with low inductance and resistance, and provides effective thermal management. Co-packaging of a CMOS input interface circuit with the CMOS driver and GaN transistor allows for a compact, integrated CMOS driver with enhanced functionality including shut-down and start-up conditioning for safer operation, particularly for high voltage and high current switching. Preferred embodiments also provide isolated, self-powered, high speed driver devices, with reduced input losses.