Method of processing a substrate and apparatus for performing the same
US9105581B2 · kind B2 · utility
2Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2014 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Jun 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6719
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.