Rotatable and tunable heaters for semiconductor furnace
US9105591B2 · kind B2 · utility
2Cited by
13References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2013 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Aug 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.