Patent · US Active

Process for forming a crack in a material

US9105688B2 · kind B2 · utility

1Cited by

2References

15Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Aurelie Tauzin · St-Estève, FR
Frédéric Mazen · Grenoble, FR

Key dates

Filing date	Apr 27, 2012
Grant date	Aug 11, 2015
Priority date	—
Expiry date	Apr 27, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76254
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for forming a layer (26) of semiconductor material from a substrate (20), or donor substrate, made of the same semiconductor material is described, comprising:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.