Patent · US Active

Method for forming self-aligned contacts/vias with high corner selectivity

US9105700B2 · kind B2 · utility

3Cited by

2References

19Claims

0Family size

Assignee

Lam Research Corporation · US

Inventors

Ananth Indrakanti · Fremont, US
Peng Wang · San Diego, US
Eric A. Hudson · Berkeley, US

Key dates

Filing date	Dec 12, 2013
Grant date	Aug 11, 2015
Priority date	—
Expiry date	Dec 12, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/334
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of etching self-aligned contact/via features in a low-k dielectric layer disposed below a hardmask, which is disposed below a planarization layer. At least one cycle is provided, where each cycle comprises thinning the planarization layer, forming a deposition layer on the hardmask and planarization layer; and etching the low-k dielectric layer masked by the deposition layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.