Semiconductor device with metal-filled groove in polysilicon gate electrode
US9105713B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2012 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Nov 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/662
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a body region of a first conductivity type in the substrate, a source region of a second conductivity type opposite the first conductivity type adjacent the body region, and a trench extending into the substrate adjacent the source and body regions. The trench contains a polysilicon gate electrode insulated from the substrate. The device further includes a dielectric layer on the substrate, a gate metallization on the dielectric layer and covering part of the substrate and a source metallization on the dielectric layer and electrically connected to the source region. The source metallization is spaced apart from the gate metallization and covers a different part of the substrate than the gate metallization. A metal-filled groove in the polysilicon gate electrode is electrically connected to the gate metallization, and extends along a length of the trench underneath at least part of the source metallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.