Semiconductor-on-insulator device including stand-alone well implant to provide junction butting

US9105725B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Dechao Guo · Niskayuna, US
• Wilfried Haensch · Somers, US
• Gan Wang · Fishkill, US
• Xin Wang · Los Angeles, US
• Yanfeng Wang · Qingdao, CN
• Keith Kwong Hon Wong · Wappingers Falls, US

Key dates

• Filing date: Jan 14, 2014
• Grant date: Aug 11, 2015
• Expiry date: Jan 14, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6719

Abstract

A semiconductor device includes a semiconductor-on-insulator (SOI) substrate having a bulk substrate layer, an active semiconductor layer, and a buried insulator layer interposed between the bulk substrate layer and the active semiconductor layer. A first source/drain (S/D) region includes a first stand-alone butting implant having a first butting width. A second S/D region includes a second stand-alone butting implant having a second butting width. A gate well-region is interposed between the first and second S/D regions. The gate well-region has a gate width that is greater than the first and second butting widths.