Semiconductor physical quantity sensor and method for manufacturing the same
US9105753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2013 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Aug 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor physical quantity sensor includes (i) a semiconductor substrate having a first conductive type, (ii) a diaphragm portion disposed in the semiconductor substrate, (iii) a sensing portion disposed in the diaphragm portion, (iv) a well layer having a second conductive type, and (v) a back flow prevention element. The well layer is disposed in a surface portion of the semiconductor substrate, and corresponds to the diaphragm portion. The back flow prevention element is provided by a MOSFET, a JFET, a MESFET, or a HEMT. The back flow prevention element includes two second conductive diffused portions and a gate electrode. The back flow prevention element is arranged on a first electrical wiring, which provides a passage for applying a predetermined voltage to the well layer from an external circuit. The back flow prevention element turns on based on a voltage applied to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.