Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions
US9105830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2013 |
| Grant date | Aug 11, 2015 |
| Priority date | — |
| Expiry date | Jul 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory is described. The magnetic memory includes dual magnetic junctions and spin-orbit interaction (SO) active layer(s). Each dual magnetic junction includes first and second reference layers, first and second nonmagnetic spacer layers and a free layer. The free layer is magnetic and between the nonmagnetic spacer layers. The nonmagnetic spacer layers are between the corresponding reference layers and the free layer. The SO active layer(s) are adjacent to the first reference layer of each dual magnetic junction. The SO active layer(s) exert a SO torque on the first reference layer due to a current passing through the SO active layer(s) substantially perpendicular to a direction between the SO active layer(s) and the first reference layer. The first reference layer has a magnetic moment changeable by at least the SO torque. The free layer is switchable using a spin transfer write current driven through the dual magnetic junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.